Doping-Based Stabilization of the M2 Phase in Free-Standing VO2 Nanostructures at Room Temperature

Abstract

A new high-yield method of doping VO2 nanostructures with aluminum is proposed, which renders possible stabilization of the monoclinic M2 phase in free-standing nanoplatelets in ambient conditions and opens an opportunity for realization of a purely electronic Mott Transition Field-Effect Transistor without an accompanying structural transition. The synthesized free-standing M2-phase nanostructures are shown to have very high crystallinity and an extremely sharp temperature-driven metal-insulator transition. A combination of x-ray microdiffraction, micro-Raman spectroscopy, Energy-Dispersive X-ray spectroscopy, and four-probe electrical measurements allowed thorough characterization of the doped nanostructures. Light is shed onto some aspects of the nanostructure growth, and the temperature-doping level phase diagram is established.