July 2016

Journal

Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide

By:
Ahn, S.; Kim, B.-j.; Lin, Yi-Hsuan; Ren, F.; Pearton, S.; Yang, Gwangseok; Kim, J.; Kravchenko, Ivan I
Journal Name:
Journal of Vacuum Science & Technology B
Page Number:
51202
Volume:
34
Issue Number:
5
Publication Date:
July 29, 2016
View DOI Listing:
https://doi.org/10.1116/1.4959786

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