October 2008

Conference Paper

Molecular Sidebands of Refractory Elements for ISOL

By:
Kronenberg, Andreas; Spejewski, Eugene; Carter, H Kennon; Mervin, Brenden; Jost, Cara; Stracener, Daniel W; Lapi, Suzanne; Bray, T.
Journal Name:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Page Number:
4252-4256
Volume:
266
Issue Number:
19-20
Publication Date:
October 29, 2008
Conference Name:
XVth International Conference on Electromagnetic Isotope Separators and Techniques Related to their Applications
Conference Location:
Deauville, France
Conference Sponsor:
GANIL
View DOI Listing:
https://doi.org/10.1016/j.nimb.2008.05.147

Abstract

The formation of molecular sidebands of refractory elements, such as V, Re, Zr, Mo, Tc, is discussed. The focus is on in situ sideband formation and its advantage for the release process. An atomic 48V beam has been produced in a two step process, forming the oxide in situ, transporting it through the target-ion source as a chloride and destroying the chlorine sideband in the ion source. The sideband formation of Re, Zr, Mo, Tc is discussed.

Related Researchers