April 2010

Journal

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

By:
Herrera, M.; Ramasse, Quentin; Morgan, D. G.; Gonzalez, D.; Pizarro, J.; Yanez, A.; Galindo, P.; Garcia, R.; Du, Maohua ; Zhang, S. B.; Hopkinson, M.; Browning, N. D.
Journal Name:
Physical Review B
Page Number:
125211
Volume:
80
Issue Number:
12
Publication Date:
April 27, 2010
View DOI Listing:
https://doi.org/10.1103/PhysRevB.80.125211