EPITAXIAL STRAIN CONTROLLED ?CHARGE LEAKAGE? AT LaMnO3 / SrTiO3 INTERFACES

Abstract

We report on the charge transfer at the interface between a band (SrTiO3) and a Mott insulator (LaMnO3) in epitaxial superlattices. We have used combined atomic resolution electron microscopy and spectroscopy, synchrotron X ray reciprocal space maps and magneto transport measurements, to characterize the interface properties. The LaMnO3 layers are always started and terminated in (LaO) planes, giving an overall electron doping to the system. However, the direction of charge leakage is determined by the manganite to titanate thickness ratio in a way controlled by the different epitaxial strain patterns. This result may provide a clue to optimize oxide devices such as magnetic tunnel junctions and field effect transistors whose operation is determined by the interface properties.