September 2016

Journal

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

By:
Ren, F.; Pearton, S.; Ahn, S.; Lin, Yi-Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, M; Smith, David; Kravchenko, Ivan I
Journal Name:
Journal of Vacuum Science & Technology B
Page Number:
51208
Volume:
34
Issue Number:
5
Publication Date:
September 27, 2016
View DOI Listing:
https://doi.org/10.1116/1.4963064

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