November 2006

Journal

Ferroelectric Bi3.25La0.75Ti3O12 Films of Uniform a-Axis Orientation on Silicon Substrates

By:
Lee, Honyung ; Hesse, Dietrich
Journal Name:
Science
Page Number:
1917-2088
Volume:
296
Issue Number:
5575
Publication Date:
November 8, 2006

Abstract

The use of bismuth-layered perovskite films for planar-type nonvolatile ferroelectric random-access memories requires films with spontaneous polarization normal to the plane of growth.


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