Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

Abstract

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 × 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 × 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 × 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.