January 2013

Journal

Intrinsic spin Hall effect in monolayers of group-VIdichalcogenides: A first-principles study

By:
Feng, wanxiang; Yao, Yugui; Zhu, Wenguang; Zhou, Jinjian; Yao, Wang; Xiao, Di
Journal Name:
Physical Review B
Page Number:
165108
Volume:
86
Issue Number:
16
Publication Date:
January 24, 2013
View DOI Listing:
https://doi.org/10.1103/PhysRevB.86.165108

Abstract

Usingfirst-principlescalculationswithindensityfunctionaltheory,weinvestigatetheintrinsicspinHalleffectinmonolayersofgroup-VItransition-metaldichalcogenidesMX2(M=Mo,WandX=S,Se).MX2monolayersaredirectband-gapsemiconductorswithtwodegeneratevalleyslocatedatthecornersofthehexagonalBrillouinzone.Becauseoftheinversionsymmetrybreakingandthestrongspin-orbitcoupling,chargecarriersinoppositevalleyscarryoppositeBerrycurvatureandspinmoment,givingrisetobothavalley-Hallandaspin-Halleffect.WealsoshowthattheintrinsicspinHallconductivityininversion-symmetricbulkdichalcogenidesisanorderofmagnitudesmallercomparedtomonolayers.Ourresultdemonstratesmonolayerdichalcogenidesasanidealplatformfortheintegrationofvalleytronicsandspintronics.