Modeling Electron Transport in Copper Interconnect Microstructures

Abstract

Present efforts to minimize the resistivity of copper interconnects are discussed in terms of a comprehensive understanding of microstructure and electron scattering. A general approach for modeling resistivity that includes Monte-Carlo simulation of grain growth, first-principles modeling for grain boundary and interfacial resistivities, and a stochastic simulation for electron transport is presented. Determination of grain boundary resistivities for ��3 twin boundaries and ��5 twist boundaries serve to illustrate steps in this approach.