December 2009

Journal

Sublimation Growth of Titanium Nitride Crystals

By:
Du, Li; Edgar, J; Kenik, Edward A; Meyer III, Harry M
Journal Name:
Journal of Materials Science: Materials in Electronics
Page Number:
78-87
Volume:
21
Issue Number:
1
Publication Date:
December 22, 2009
View DOI Listing:
https://doi.org/10.1007/s10854-009-9873-8

Abstract

The sublimation-recondensation growth of titanium nitride crystal with N/Ti ratio of 0.99 on tungsten substrate is reported. The growth rate dependence on temperature and pressure was determined, and the calculated activation energy is 775.8�29.8kJ/mol. The lateral and vertical growth rates changed with the time of growth and the fraction of the tungsten substrate surface covered. The orientation relationship of TiN (001) || W (001) with TiN [100] || W [110], a 45o angle between TiN [100] and W [100], occurs not only for TiN crystals deposited on W (001) textured tungsten but also for TiN crystals deposited on randomly orientated tungsten. This study demonstrates that this preferred orientational relationship minimizes the lattice mismatch between the TiN and tungsten.


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