July 2006

Conference Paper

Thermal and Electromigration-Induced Strains in Polycrystalline Films and Conductor Lines: X-Ray Microbeam Measurements and Analysis

By:
Cargill, III, G.; Moyer, L.; Wang, G.; Zhang, H.; Hu, C.K.; Yang, Wenge ; Larson, Bennett C; Ice, Gene E
Page Number:
303
Volume:
817
Book Title:
Stress-Induced Phenomena in Metallization
Publication Date:
July 18, 2006
Conference Name:
8th International Workshop on Stress-Induced Phenomena in Metallization
Conference Location:
Dresden, Germany
Conference Sponsor:
AXO Dresden, Bruker AXS, Carl Zeiss SMT, FEI, Infineon Technologies, Rigaku, Soliton

Abstract

X-ray microbeam measurements of thermal and electromigration-induced strains have been made at NSLS using white-beam energy dispersive x-ray diffraction, averaging over many grains, and at APS using white-beam Laue x-ray diffraction, from single grains. Grain-by-grain deviatoric strain measurements in Al films show wide variation in behavior for different grains in the films. Room temperature relaxation of residual strains was observed to occur at different rates for Al films with different bonding layers and substrates. X-ray microbeam measurements of strain development during electromigration for Cu and Al conductor lines show that strain gradients do not develop in the copper lines under conditions similar to those for which large strain gradients have been seen for Al lines