Vertical and In-Plane Heterostructures from WS2/MoS2 Monolayers

Abstract

Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up new unprecedented opportunities to engineer two-dimensional (2D) heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of MoS2 monolayer are formed with preferred stacking order at high temperature. Strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapor growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p-n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties.