Researchers at Oak Ridge National Laboratory have developed a non-invasive method for detecting and mapping spin defects in advanced materials at the nanoscale. The technology uses a quantum sensing approach to identify and characterize spin-active defects that may be difficult or impossible to observe using conventional optical techniques. By enabling high-resolution measurements of defect density, spatial distribution, and charge state, this approach can accelerate the development and evaluation of emerging quantum materials and devices.
Description
This technology leverages a scanning quantum sensor to detect magnetic interactions associated with spin defects in materials without requiring direct optical access to the target defects. The approach combines advanced relaxometry measurements with computational modeling to quantify defect density and create nanoscale maps of spin-active regions. Unlike traditional characterization methods that are limited by optical diffraction or that average measurements across large sample volumes, this technique provides spatially resolved information with nanoscale precision.
The method can distinguish between defect charge states and selectively identify defects that are relevant for quantum device performance. It is particularly valuable for studying materials that contain optically dim or otherwise difficult-to-access spin systems. Because the sensing platform relies on indirect detection, it can be applied across a broad range of material systems and defect types while reducing the need for specialized detection infrastructure. The technology offers a versatile characterization tool for researchers and companies developing next-generation quantum materials, sensors, and information technologies.
